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? semiconductor components industries, llc, 2016 august, 2016 ? rev. 5 1 publication order number: ncv8716/d ncv8716 80 ma ultra-low iq, wide input voltage low dropout regulator the ncv8716 is 80 ma ldo linear voltage regulator. it is a very stable and accurate device with ultra?low ground current consumption (4.7 a over the full output load range) and a wide input voltage range (up to 24 v). the regulator incorporates several protection features such as thermal shutdown and current limiting. features ? operating input voltage range: 2.5 v to 24 v ? fixed voltage options available: 1.5 v to 5.0 v ? ultra low quiescent current: max. 4.7 a over temperature ? 2% accuracy over full load, line and temperature variations ? psrr: 60 db at 100 khz ? noise: 200 v rms from 200 hz to 100 khz ? thermal shutdown and current limit protection ? available in wdfn6, 2x2x0.8 mm package ? ncv prefix for automotive and other applications requiring unique site and control change requirements; aec?q100 qualified and ppap capable; device temperature grade 1: ?40 c to +125 c ambient operating temperature range ? these devices are pb?free, halogen free/bfr free and are rohs compliant typical applications ? portable equipment ? communication systems figure 1. typical application schematic www. onsemi.com see detailed ordering, marking and shipping information on page 16 of this data sheet. ordering information marking diagrams wdfn6 case 511br pin connections wdfn6 2x2 mm (top view) 1 2 3 exp xx m 1 xx = specific device code m = date code 6 5 4
ncv8716 www. onsemi.com 2 figure 2. simplified block diagram in out mosfet driver with current limit thermal shutdown eeprom uvlo gnd bandgap reference table 1. pin function description pin no. pin name description 6 out regulated output voltage pin. a small 0.47 f ceramic capacitor is needed from this pin to ground to assure stability. 2 n/c no connection. this pin can be tied to ground to improve thermal dissipation or left disconnected. 3, exp gnd power supply ground. exposed pad exp must be tied with gnd pin 3. 4 n/c no connection. this pin can be tied to ground to improve thermal dissipation or left disconnected. 5 n/c no connection. this pin can be tied to ground to improve thermal dissipation or left disconnected. 1 in input pin. a small capacitor is needed from this pin to ground to assure stability. table 2. absolute maximum ratings rating symbol value unit input voltage (note 1) v in ?0.3 to 24 v output voltage v out ?0.3 to 6 v output short circuit duration t sc indefinite s maximum junction temperature t j(max) 150 c operating ambient temperature range t a ?40 to 125 c storage temperature range t stg ?55 to 150 c esd capability, human body model (note 2) esd hbm 2000 v esd capability, machine model (note 2) esd mm 200 v stresses exceeding maximum ratings may damage the device. maximum ratings are stress ratings only. functional operation above t he recommended operating conditions is not implied. extended exposure to stresses above the recommended operating conditions may af fect device reliability. 1. refer to electrical characteristics and application information for safe operating area. 2. this device series incorporates esd protection and is tested by the following methods: esd human body model tested per eia/jesd22?a114 esd machine model tested per eia/jesd22?a115 latch up current maximum rating tested per jedec standard: jesd78. table 3. thermal characteristics rating symbol value unit thermal characteristics, wdfn6, 2 mm x 2 mm thermal resistance, junction?to?air r ja 120 c/w table 4. recommended operating conditions parameter symbol min max unit input voltage v in 2.5 24 v junction temperature t j ?40 125 c functional operation above the stresses listed in the recommended operating ranges is not implied. extended exposure to stresse s beyond the recommended operating ranges limits may affect device reliability.
ncv8716 www. onsemi.com 3 table 5. electrical characteristics voltage version 1.5 v ?40 c t j 125 c; v in = 3.0 v; i out = 1 ma, c in = c out = 1.0 f, unless otherwise noted. typical values are at t j = +25 c. (note 5) parameter test conditions symbol min typ max unit operating input voltage i out 10 ma v in 2.5 24 v 10 ma < i out < 80 ma 3.0 24 output voltage accuracy 3.0 v < v in < 24 v, 0 < i out < 80 ma v out 1.455 1.5 1.545 v line regulation 3.0 v v in 24 v, i out = 1 ma reg line 20 25 mv load regulation i out = 0 ma to 80 ma reg load 20 25 mv dropout voltage (note 3) maximum output current (note 6) i out 110 ma ground current 0 < i out < 80 ma, v in = 24 v i gnd 3.4 5.8 a power supply rejection ratio v in = 3.0 v, v out = 1.5 v v pp = 200 mv modulation i out = 1 ma, c out = 10 f f = 100 khz psrr 56 db output noise voltage v out = 1.5 v, i out = 80 ma f = 200 hz to 100 khz v n 120 v rms thermal shutdown temperature (note 4) temperature increasing from t j = +25 c t sd 155 c thermal shutdown hysteresis (note 4) temperature falling from t sd t sdh ? 25 ? c product parametric performance is indicated in the electrical characteristics for the listed test conditions, unless otherwise noted. product performance may not be indicated by the electrical characteristics if operated under different conditions. 3. not characterized at v in = 3.0 v, v out = 1.5 v, i out = 80 ma 4. guaranteed by design and characterization. 5. performance guaranteed over the indicated operating temperature range by design and/or characterization production tested at t j = t a = 25 c. low duty cycle pulse techniques are used during testing to maintain the junction temperature as close to ambient as possible . 6. respect soa
ncv8716 www. onsemi.com 4 table 6. electrical characteristics voltage version 1.8 v ?40 c t j 125 c; v in = 3.0 v; i out = 1 ma, c in = c out = 1.0 f, unless otherwise noted. typical values are at t j = +25 c. (note 9) parameter test conditions symbol min typ max unit operating input voltage i out 10 ma v in 2.8 24 v 10 ma < i out < 80 ma 3.0 24 output voltage accuracy 3.0 v < v in < 24 v, 0 < i out < 80 ma v out 1.746 1.8 1.854 v line regulation 3.0 v v in 24 v, i out = 1 ma reg line 15 20 mv load regulation i out = 0 ma to 80 ma reg load 15 20 mv dropout voltage (note 7) maximum output current (note 10) i out 110 ma ground current 0 < i out < 80 ma, v in = 24 v i gnd 3.4 5.8 a power supply rejection ratio v in = 3.0 v, v out = 1.8 v v pp = 200 mv modulation i out = 1 ma, c out = 10 f f = 100 khz psrr 60 db output noise voltage v out = 1.8 v, i out = 80 ma f = 200 hz to 100 khz v n 140 v rms thermal shutdown temperature (note 8) temperature increasing from t j = +25 c t sd 155 c thermal shutdown hysteresis (note 8) temperature falling from t sd t sdh ? 25 ? c product parametric performance is indicated in the electrical characteristics for the listed test conditions, unless otherwise noted. product performance may not be indicated by the electrical characteristics if operated under different conditions. 7. not characterized at v in = 3.0 v, v out = 1.8 v, i out = 80 ma 8. guaranteed by design and characterization. 9. performance guaranteed over the indicated operating temperature range by design and/or characterization production tested at t j = t a = 25 c. low duty cycle pulse techniques are used during testing to maintain the junction temperature as close to ambient as possible . 10. respect soa
ncv8716 www. onsemi.com 5 table 7. electrical characteristics voltage version 2.5 v ?40 c t j 125 c; v in = 3.5 v; i out = 1 ma, c in = c out = 1.0 f, unless otherwise noted. typical values are at t j = +25 c. (note 13) parameter test conditions symbol min typ max unit operating input voltage i out = 80 ma v in 3.5 24 v output voltage accuracy 3.5 v < v in < 24 v, 0 < i out < 80 ma v out 2.45 2.5 2.55 v line regulation v out + 1 v v in 24 v, i out = 1ma reg line 15 20 mv load regulation i out = 0 ma to 80 ma reg load 15 20 mv dropout voltage (note 11) v do = v in ? (v out(nom) ? 125 mv) i out = 80 ma v do 400 640 mv maximum output current (note 14) i out 110 ma ground current 0 < i out < 80 ma, v in = 24 v i gnd 3.4 5.8 a power supply rejection ratio v in = 3.5 v, v out = 2.5 v v pp = 200 mv modulation i out = 1 ma, c out = 10 f f = 100 khz psrr 60 db output noise voltage v out = 2.5 v, i out = 80 ma f = 200 hz to 100 khz v n 160 v rms thermal shutdown temperature (note 12) temperature increasing from t j = +25 c t sd 155 c thermal shutdown hysteresis (note 12) temperature falling from t sd t sdh ? 25 ? c product parametric performance is indicated in the electrical characteristics for the listed test conditions, unless otherwise noted. product performance may not be indicated by the electrical characteristics if operated under different conditions. 11. characterized when v out falls 125 mv below the regulated voltage and only for devices with v out = 2.5 v 12. guaranteed by design and characterization. 13. performance guaranteed over the indicated operating temperature range by design and/or characterization production tested at t j = t a = 25 c. low duty cycle pulse techniques are used during testing to maintain the junction temperature as close to ambient as possible . 14. respect soa
ncv8716 www. onsemi.com 6 table 8. electrical characteristics voltage version 3.0 v ?40 c t j 125 c; v in = 4.0 v; i out = 1 ma, c in = c out = 1.0 f, unless otherwise noted. typical values are at t j = +25 c. (note 17) parameter test conditions symbol min typ max unit operating input voltage i out = 80 ma v in 4.0 24 v output voltage accuracy 4.3 v < v in < 24 v, 0 < i out < 80 ma v out 2.94 3.0 3.06 v line regulation v out + 1 v v in 24 v, i out = 1 ma reg line 4 10 mv load regulation i out = 0 ma to 80 ma reg load 10 30 mv dropout voltage (note 15) v do = v in ? (v out(nom) ? 150 mv) i out = 80 ma v do 370 580 mv maximum output current (note 18) i out 110 ma ground current 0 < i out < 80 ma, v in = 24 v i gnd 3.4 5.8 a power supply rejection ratio v in = 4.3 v, v out = 3.3 v v pp = 200 mv modulation i out = 1 ma, c out = 10 f f = 100 khz psrr 58 db output noise voltage v out = 4.3 v, i out = 80 ma f = 200 hz to 100 khz v n 190 v rms thermal shutdown temperature (note 16) temperature increasing from t j = +25 c t sd 155 c thermal shutdown hysteresis (note 16) temperature falling from t sd t sdh ? 25 ? c product parametric performance is indicated in the electrical characteristics for the listed test conditions, unless otherwise noted. product performance may not be indicated by the electrical characteristics if operated under different conditions. 15. characterized when v out falls 150 mv below the regulated voltage and only for devices with v out = 3.0 v 16. guaranteed by design and characterization. 17. performance guaranteed over the indicated operating temperature range by design and/or characterization production tested at t j = t a = 25 c. low duty cycle pulse techniques are used during testing to maintain the junction temperature as close to ambient as possible . 18. respect soa
ncv8716 www. onsemi.com 7 table 9. electrical characteristics voltage version 3.3 v ?40 c t j 125 c; v in = 4.3 v; i out = 1 ma, c in = c out = 1.0 f, unless otherwise noted. typical values are at t j = +25 c. (note 21) parameter test conditions symbol min typ max unit operating input voltage i out = 80 ma v in 4.3 24 v output voltage accuracy 4.3 v < v in < 24 v, 0 < i out < 80 ma v out 3.234 3.3 3.366 v line regulation v out + 1 v v in 24 v, i out = 1 ma reg line 4 10 mv load regulation i out = 0 ma to 80 ma reg load 10 30 mv dropout voltage (note 19) v do = v in ? (v out(nom) ? 165 mv) i out = 80 ma v do 350 560 mv maximum output current (note 22) i out 110 ma ground current 0 < i out < 80 ma, v in = 24 v i gnd 3.4 5.8 a power supply rejection ratio v in = 4.3 v, v out = 3.3 v v pp = 200 mv modulation i out = 1 ma, c out = 10 f f = 100 khz psrr 60 db output noise voltage v out = 4.3 v, i out = 80 ma f = 200 hz to 100 khz v n 200 v rms thermal shutdown temperature (note 20) temperature increasing from t j = +25 c t sd 155 c thermal shutdown hysteresis (note 20) temperature falling from t sd t sdh ? 25 ? c product parametric performance is indicated in the electrical characteristics for the listed test conditions, unless otherwise noted. product performance may not be indicated by the electrical characteristics if operated under different conditions. 19. characterized when v out falls 165 mv below the regulated voltage and only for devices with v out = 3.3 v 20. guaranteed by design and characterization. 21. performance guaranteed over the indicated operating temperature range by design and/or characterization production tested at t j = t a = 25 c. low duty cycle pulse techniques are used during testing to maintain the junction temperature as close to ambient as possible . 22. respect soa
ncv8716 www. onsemi.com 8 table 10. electrical characteristics voltage version 5.0 v ?40 c t j 125 c; v in = 6.0 v; i out = 1 ma, c in = c out = 1.0 f, unless otherwise noted. typical values are at t j = +25 c. (note 25) parameter test conditions symbol min typ max unit operating input voltage i out = 80 ma v in 6.0 24 v output voltage accuracy 6.0 v < v in < 24 v, 0 < i out < 80 ma v out 4.9 5.0 5.1 v line regulation v out + 1 v v in 24 v, i out = 1 ma reg line 4 10 mv load regulation i out = 0 ma to 80 ma reg load 10 30 mv dropout voltage (note 23) v do = v in ? (v out(nom) ? 250 mv) i out = 80 ma v do 310 500 mv maximum output current (note 26) i out 110 ma ground current 0 < i out < 80 ma, v in = 24 v i gnd 3.4 5.8 a power supply rejection ratio v in = 6.0 v, v out = 5.0 v v pp = 200 mv modulation i out = 1 ma, c out =10 f f = 100 khz psrr 54 db output noise voltage v out = 5.0 v, i out = 80 ma f = 200 hz to 100 khz v n 220 v rms thermal shutdown temperature (note 24) temperature increasing from t j = +25 c t sd 155 c thermal shutdown hysteresis (note 24) temperature falling from t sd t sdh ? 25 ? c product parametric performance is indicated in the electrical characteristics for the listed test conditions, unless otherwise noted. product performance may not be indicated by the electrical characteristics if operated under different conditions. 23. characterized when v out falls 250 mv below the regulated voltage and only for devices with v out = 5.0 v 24. guaranteed by design and characterization. 25. performance guaranteed over the indicated operating temperature range by design and/or characterization production tested at t j = t a = 25 c. low duty cycle pulse techniques are used during testing to maintain the junction temperature as close to ambient as possible . 26. respect soa
ncv8716 www. onsemi.com 9 typical characteristics 5.0 v 15 v 24 v 10 v 20 v 5.0 v 15 v 24 v 10 v 20 v figure 3. ncv8716x15xxx output voltage vs. temperature figure 4. ncv8716x25xxx output voltage vs. temperature temperature ( c) temperature ( c) 100 80 60 40 20 0 ?20 ?40 2.490 2.494 2.498 2.502 2.506 2.510 2.514 figure 5. ncv8716x33xxx output voltage vs. temperature figure 6. ncv8716x50xxx output voltage vs. temperature temperature ( c) temperature ( c) 100 80 60 40 20 0 ?20 ?40 3.284 3.288 3.292 3.296 3.300 3.304 3.308 120 80 60 40 20 0 ?20 ?40 4.945 4.955 4.965 4.975 4.985 4.995 5.005 figure 7. ncv8716x15xxx output voltage vs. output current figure 8. ncv8716x25xxx output voltage vs. output current output current (ma) output current (ma) 70 60 50 40 30 20 10 0 2.46 2.47 2.48 2.49 2.50 2.51 2.52 output voltage (v) output voltage (v) output voltage (v) output voltage (v) output voltage (v) output voltage (v) 120 120 v in = 3.0 v v in = (5 v ? 24 v) i out = 1 ma c in = c out = 1 f v in = 3.5 v v in = (5 v ? 24 v) i out = 1 ma c in = c out = 1 f v in = (4.3 v ? 24 v) i out = 1 ma c in = c out = 1 f v in = 6.0 v v in = (8 v ? 24 v) i out = 1 ma c in = c out = 1 f 100 t a = 25 c c in = c out = 1 f v in = 3.0 v 80 t a = 25 c c in = c out = 1 f v in = 3.5 v 1.5 1.502 1.504 1.506 1.508 1.51 1.512 1.514 ?40 ?20 0 20 40 60 80 100 120 1.498 1.500 1.502 1.504 1.506 1.508 1.510 0 1020304050607080
ncv8716 www. onsemi.com 10 typical characteristics 0 5 10 15 20 25 30 0 5 10 15 20 25 8.0 v 15 v 20 v figure 9. ncv8716x33xxx output voltage vs. output current figure 10. ncv8716x50xxx output voltage vs. output current output current (ma) output current (ma) 70 60 50 40 30 20 10 0 3.280 3.284 3.288 3.292 3.296 3.300 3.304 70 60 50 40 30 20 10 0 4.970 4.975 4.980 4.985 4.990 4.995 5.000 figure 11. ncv8716x25xxx dropout voltage vs. output current figure 12. ncv8716x33xxx dropout voltage vs. output current output current (ma) output current (ma) 70 60 50 40 30 20 10 0 0 0.1 0.2 0.3 0.4 0.5 0.6 70 60 50 40 30 20 10 0 0 0.1 0.2 0.3 0.4 0.5 0.6 figure 13. ncv8716x50xxx dropout voltage vs. output current figure 14. ncv8716x15xxx ground current vs. input voltage output current (ma) input voltage (v) 70 60 50 40 30 20 10 0 0 0.1 0.2 0.3 0.4 0.5 0.6 output voltage (v) output voltage (v) dropout voltage (v) dropout voltage (v) dropout voltage (v) quiescent current ( a) 80 5.0 v 24 v 10 v t a = 25 c c in = c out = 1 f v in = 4.3 v 15 v 20 v 24 v 10 v t a = 25 c c in = c out = 1 f v in = 6.0 v 8 0 c in = c out = 1 f t a = 25 c t a = ?40 c t a = 125 c 80 8 0 c in = c out = 1 f t a = 25 c t a = ?40 c t a = 125 c c in = c out = 1 f t a = 25 c t a = ?40 c t a = 125 c 80 t a = 25 c c in = c out = 1 f i out = 0 i out = 80 ma
ncv8716 www. onsemi.com 11 typical characteristics 2.5 3.0 3.5 4.0 4.5 5.0 5.5 ?40 ?20 0 20 40 60 80 100 120 figure 15. ncv8716x25xxx ground current vs. input voltage figure 16. ncv8716x50xxx ground current vs. input voltage input voltage (v) input voltage (v) 25 20 15 10 5 0 0 5 10 15 20 25 30 25 20 15 10 5 0 0 5 10 15 25 30 35 40 figure 17. ncv8716x33xxx ground current vs. input voltage figure 18. ncv8716x15xxx quiescent current vs. temperature input voltage (v) temperature ( c) 25 20 15 10 5 0 0 5 10 15 20 25 30 figure 19. ncv8716x25xxx quiescent current vs. temperature figure 20. ncv8716x33xxx quiescent current vs. temperature temperature ( c) temperature ( c) 100 80 60 40 20 0 ?20 ?40 2.5 3.0 3.5 4.0 4.5 5.0 5.5 100 80 60 40 20 0 ?20 ?40 2.5 3.0 3.5 4.0 4.5 5.0 5.5 quiescent current ( a) quiescent current ( a) quiescent current ( a) quiescent current ( a) quiescent current ( a) quiescent current ( a) t a = 25 c c in = c out = 1 f i out = 0 i out = 80 ma t a = 25 c c in = c out = 1 f i out = 0 i out = 80 ma 20 t a = 25 c c in = c out = 1 f i out = 0 i out = 80 ma v in = 3.0 v i out = 0 c in = c out = 1 f v in = 10 v v in = 24 v v in = 3.5 v i out = 0 c in = c out = 1 f v in = 10 v v in = 24 v 120 120 v in = 4.3 v i out = 0 c in = c out = 1 f v in = 10 v v in = 24 v
ncv8716 www. onsemi.com 12 typical characteristics 0 20 40 60 80 100 0.1 1.0 10.0 100.0 1000.0 figure 21. nvp716x50xxx quiescent current vs. temperature figure 22. ncv8716x15xxx psrr vs. frequency temperature ( c) frequency (khz) 100 80 60 40 20 0 ?20 ?40 2.5 3.0 3.5 4.0 4.5 5.0 5.5 figure 23. ncv8716x25xxx psrr vs. frequency figure 24. ncv8716x33xxx psrr vs. frequency frequency (khz) frequency (khz) 1000 100 10 1 0.1 0 20 40 60 80 100 1000 100 10 1 0.1 0 20 40 60 80 100 figure 25. ncv8716x50xxx psrr vs. frequency figure 26. ncv8716x15xxx output spectral noise density vs. frequency frequency (khz) frequency (khz) 1000 100 10 1 0.1 0 20 40 60 80 100 1000 100 10 1 0.1 0.01 0 0.2 0.4 0.6 1.0 1.2 1.4 1.6 quiescent current ( a) psrr (db) psrr (db) psrr (db) psrr (db) v/sqrt (hz) v in = 6.0 v i out = 0 c in = c out = 1 f v in = 10 v v in = 24 v 120 0.8 i out = 80 ma i out = 10 ma i out = 1 ma v in = 3.0 v + 200 mvpp modulation c out = 10 f t a = 25 c v in = 3.5 v + 200 mvpp modulation c out = 10 f t a = 25 c i out = 80 ma i out = 10 ma i out = 1 ma v in = 4.3 v + 200 mvpp modulation c out = 10 f t a = 25 c i out = 80 ma i out = 10 ma i out = 1 ma v in = 6.0 v + 200 mvpp modulation c out = 10 f t a = 25 c i out = 80 ma i out = 10 ma i out = 1 ma c out = 4.7 f c out = 10 f i out = 80 ma t a = 25 c v in = 3.0 v
ncv8716 www. onsemi.com 13 typical characteristics figure 27. ncv8716x25xxx output spectral noise density vs. frequency figure 28. ncv8716x33xxx output spectral noise density vs. frequency frequency (khz) frequency (khz) 1000 100 10 1 0.1 0.01 0 0.5 1.0 1.5 2.0 3.0 3.5 4.0 1000 100 10 1 0.1 0.01 0 0.5 1.5 2.0 2.5 3.5 4.5 5.0 figure 29. ncv8716x50xxx output spectral noise density vs. frequency figure 30. load transient response frequency (khz) 1000 100 10 1 0.1 0.01 0 1 2 4 5 6 7 8 figure 31. load transient response figure 32. load transient response v/sqrt (hz) v/sqrt (hz) v/sqrt (hz) 2.5 1.0 3.0 4.0 3 c out = 4.7 f c out = 10 f i out = 80 ma t a = 25 c v in = 3.5 v c out = 4.7 f c out = 10 f i out = 80 ma t a = 25 c v in = 4.3 v c out = 4.7 f c out = 10 f i out = 80 ma t a = 25 c v in = 6.0 v
ncv8716 www. onsemi.com 14 typical characteristics figure 33. load transient response figure 34. line transient response figure 35. line transient response figure 36. line transient response figure 37. line transient response figure 38. input voltage turn?on response
ncv8716 www. onsemi.com 15 typical characteristics figure 39. input voltage turn?on response figure 40. input voltage turn?on response
ncv8716 www. onsemi.com 16 applications information the ncv8716 is the member of new family of w ide input voltage range low dropout regulators which delivers ultra low ground current consumption, good noise and power supply rejection ratio performance. input decoupling (c in ) it is recommended to connect at least 0.1 f ceramic x5r or x7r capacitor between in and gnd pin of the device. this capacitor will provide a low impedance path for any unwanted ac signals or noise superimposed onto constant input voltage. the good input capacitor will limit the influence of input trace inductances and source resistance during sudden load current changes. higher capacitance and lower esr capacitors will improve the overall line transient response. output decoupling (c out ) the ncv8716 does not require a minimum equivalent series resistance (esr) for the output capacitor. the device is designed to be stable with standard ceramics capacitors with values of 0.47 f or greater up to 10 f. the x5r and x7r types have the lowest capacitance variations over temperature thus they are recommended. power dissipation and heat sinking the maximum power dissipation supported by the device is dependent upon board design and layout. mounting pad configuration on the pcb, the board material, and the ambient temperature affect the rate of junction temperature rise for the part. the maximum power dissipation the ncv8716 can handle is given by: p d(max) t j(max) t a r ja (eq. 1) the power dissipated by the ncv8716 for given application conditions can be calculated from the following equations: p d v in i gnd (i out ) i out v in v out (eq. 2) or v in(max) p d(max) v out
i out i out i gnd (eq. 3) for reliable operation, junction temperature should be limited to +125 c maximum. hints v in and gnd printed circuit board traces should be as wide as possible. when the impedance of these traces is high, there is a chance to pick up noise or cause the regulator to malfunction. place external components, especially the output capacitor, as close as possible to the ncv8716, and make traces as short as possible . ordering information device voltage option marking package shipping ? ncv8716mt15tbg 1.5 v 7c wdfn6 (pb?free) 3000 / tape & reel ncv8716mt18tbg 1.8 v 7d ncv8716mt25tbg 2.5 v 7e NCV8716MT28TBG (in development) 2.8 v 7j ncv8716mt30tbg 3.0 v 7f ncv8716mt33tbg 3.3 v 7g ncv8716mt50tbg 5.0 v 7h ?for information on tape and reel specifications, including part orientation and tape sizes, please refer to our tape and reel packaging specifications brochure, brd8011/d.
ncv8716 www. onsemi.com 17 package dimensions wdfn6 2x2, 0.65p case 511br issue b mounting footprint* recommended dimensions: millimeters 6x 0.45 2.30 1.12 1.72 0.65 pitch 6x 0.40 1 package outline *for additional information on our pb?free strategy and soldering details, please download the on semiconductor soldering and mounting techniques reference manual, solderrm/d. notes: 1. dimensioning and tolerancing per asme y14.5m, 1994. 2. controlling dimension: millimeters. 3. dimension b applies to plated terminal and is measured between 0.15 and 0.25 mm from the terminal tip. 4. coplanarity applies to the exposed pad as well as the terminals. 5. for devices containing wettable flank option, detail a alternate construction a-2 and detail b alternate construction b-2 are not applicable. seating plane d e 0.10 c a3 a a1 0.10 c dim a min max millimeters 0.70 0.80 a1 0.00 0.05 a3 0.20 ref b 0.25 0.35 d 2.00 bsc d2 1.50 1.70 0.90 1.10 e 2.00 bsc e2 e 0.65 bsc 0.20 0.40 l pin one reference 0.05 c 0.05 c note 4 a 0.10 c note 3 l e d2 e2 b b 3 6 6x 1 4 0.05 c bottom view l1 detail a l alternate constructions l detail a detail b a b top view c side view --- 0.15 l1 6x m m ?? detail b mold cmpd exposed cu alternate constructions ?? on semiconductor and are trademarks of semiconductor components industries, llc dba on semiconductor or its subsidiaries i n the united states and/or other countries. on semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property . a listing of on semiconductor?s product/patent coverage may be accessed at www.onsemi.com/site/pdf/patent?marking.pdf . on semiconductor reserves the right to make changes without further notice to any products herein. on semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does o n semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including wi thout limitation special, consequential or incidental damages. buyer is responsible for its products and applications using on semiconductor products, including compliance with all laws, reg ulations and safety requirements or standards, regardless of any support or applications information provided by on semiconductor. ?typical? parameters which may be provided in on semiconductor data sheets and/or specifications can and do vary in dif ferent applications and actual performance may vary over time. all operating parameters, including ?typic als? must be validated for each customer application by customer?s technical experts. on semiconductor does not convey any license under its patent rights nor the right s of others. on semiconductor products are not designed, intended, or authorized for use as a critical component in life support systems or any fda class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for implantation in the human body. should buyer purchase or use on semicondu ctor products for any such unintended or unauthorized application, buyer shall indemnify and hold on semiconductor and its officers, employees, subsidiaries, affiliates, and distrib utors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that on semiconductor was negligent regarding the design or manufacture of the part. on semiconductor is an equal opportunity/affirmative action employer. this literature is subject to all applicable copyright laws and is not for resale in any manner. p ublication ordering information n. american technical support : 800?282?9855 toll free usa/canada europe, middle east and africa technical support: phone: 421 33 790 2910 japan customer focus center phone: 81?3?5817?1050 ncv8716/d literature fulfillment : literature distribution center for on semiconductor 19521 e. 32nd pkwy, aurora, colorado 80011 usa phone : 303?675?2175 or 800?344?3860 toll free usa/canada fax : 303?675?2176 or 800?344?3867 toll free usa/canada email : orderlit@onsemi.com on semiconductor website : www.onsemi.com order literature : http://www.onsemi.com/orderlit for additional information, please contact your loc al sales representative

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